carrier concentration
英 [ˈkæriə(r) ˌkɒnsnˈtreɪʃn]
美 [ˈkæriər ˌkɑːnsnˈtreɪʃn]
网络 载流子浓度; 载子浓度; 载流子密度
双语例句
- The room temperature ferromagnetism in Co-doped ZnO films with different carrier concentration fabricated by the sol – gel method at different annealing atmospheres was investigated.
用溶胶–凝胶法制备的钴掺杂氧化锌薄膜在不同气氛下退火后均显示室温铁磁性，并且具有不同的载流子浓度。 - Silicon epitaxial layers Determination of carrier concentration Mercury probe Voltage-capacitance method
GB/T14146-1993硅外延层载流子浓度测定汞探针电容-电压法 - It is indicated that the boron doping promotes the growth of ( 111) face of the diamonds, enhances acceptor level, narrow's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的（111）晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。 - Apparatus the Semiconductor Hall Coefficient and Carrier Concentration at the Conditions of Different Temperatures
变温条件下半导体霍尔系数及载流子浓度的测量 - By using pulse-driven currents, the effects of junction temperature and carrier concentration on this type of degradation can be distinguished.
藉由脉冲驱动，我们可以区分高功率氮化镓发光二极体中接面温度和注入载子浓度对发光效率衰减的影响。 - Effects of boron doping on carrier concentration of diamond film
硼掺杂对金刚石薄膜载流子浓度的影响 - The results showed that the crystals possess good radial composition uniformity, low carrier concentration and high minority lifetime.
这些晶体具有较好的横向组分均匀性、较低的载流子浓度和较长的少数载流子寿命。 - The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained.
得到了电子亚带能量和波函数随自由载流子浓度的变化规律。 - The carrier concentration of surface after CO2 laser irradiation can exceed the solid solubility limit.
经过激光处理后样品表面一薄层载流子浓度超过了杂质的固溶度极限。 - The application of the simplified Fermionic integrals reveals that the carrier concentration varies with temperature change.
利用费米积分的简化方案，揭示了载流子浓度随温度变化的规律。 - Here the conductance, carrier concentration and hall mobility ect parameters of Er doped CdTe films have been given.
讨论了不同Er离子注入量对硅基底上沉积的CdTe薄膜结构和光电性能的影响，并具体给出了掺杂CdTe多晶薄膜的电导、载流子浓度及迁移率等参数值。 - The surface morphology, growth rate, residual impurity level, electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy.
对低温外延时的表面形貌，生长速率，剩余杂质浓度，电子迁移率，深能级杂质和纵向浓度分布进行了讨论，并与高温外延进行了比较。 - In this paper, firstly, a theoretical analysis about the effects of channel depth and interface state on extracting result is made. Then the C-V curves for buried-channel MOS structure with two different channel depth are presented from which the channel carrier concentration is extracted.
本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响，然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试，提取出了沟道掺杂浓度。 - The absorption spectra, exponential gain coefficient, diffraction efficiency and effect carrier concentration of the crystal were measured.
测试晶体的吸收光谱、指数增益系数、衍射效率和有效载流子浓度。 - Under room temperature conditions, the influence of measuring current and magnetic field on carrier concentration and mobility results are studied too.
在室温条件下测量电流和磁场的大小对载流子浓度和迁移率测量结果的影响。 - The carrier concentration profiles and the anomalous enhanced diffusion in Si implanted with boron and phosphorus ions are observed.
观察了硼和磷离子注入Si中的载流子浓度剖面分布和异常增强扩散。 - The oxygen adsorption on the film increases the grain-boundary potential and changes the carrier concentration in the crystallite.
氧气在这种多晶薄膜上的吸附提高了薄膜中晶粒间的界现势垒，并改变了晶粒中的载流子浓度。 - In this paper, the high temperature models and calculation results of silicon materials 'intrinsic carrier concentration m, energy gap Eg, effective mass of electron and hole as well as carrier mobility p are introduced.
介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。 - The mobility and residual carrier concentration will increase as the ⅴ/ ⅲ ratio increases.
迁移率和本征载流子浓度随着Ⅴ/Ⅲ比的增加而增大。 - A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out.
本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析。 - The processes are closely related to carrier concentration and lattice temperature.
这个过程与载流子浓度和晶格温度有密切关系。 - The exponential gain coefficient and effective carrier concentration are important parameters to evaluate the photorefractive effect of the crystals.
指数增益系数和有效载流子浓度是衡量晶体光折变性能的重要参数。 - The formula for calculating the effective carrier concentration was derived and the effective carrier concentration was calculated.
推导有效载流子浓度的计算式，并且测算了有效载流子浓度的数值。 - The carrier concentration profile and the quality of the grown layers depend on the preparation of substrate surface.
生长层的载流子浓度剖面分布和质量取决于衬底表面的制备。 - Electric conduction type, resistivity, carrier concentration and mobility were obtained from the Hall effect measurement.
通过霍尔测试，获得了SiC材料的导电类型、电阻率、载流子浓度和迁移率。 - The experimental results are discussed with the theories of crystal structure expansion and the variation of carrier concentration.
对这些结果从CIO膜的晶格常数、载流子浓度等角度进行了理论分析。 - The resistivity of the SCO films decreases after annealing, but the carrier concentration and mobility increases.
经退火处理后，电阻率减小，载流子浓度和迁移率增大。 - And at definite temperature, the carrier concentration and carrier mobility ratio are not infected by the current.
同时，在温度一定时，载流子的浓度即电子迁移率均不受外电场强弱的影响。 - As substrate temperature was increased, thin film resistivity decreased sharply and carrier concentration and hall mobility increased prominently.
衬底温度增加，薄膜的电阻率急剧降低，迁移率和载流子浓度显著增加。 - The effect of the carrier concentration, silver nitrate concentration and immersion time on the bacterial inhibition rate ware studied.
研究了载体浓度、硝酸银浓度和浸渍时间对抑菌率的影响。